| Accession number;05A0249020 |
| Title;Observation of silicon secondary crystal growth from supercooled melt of Si-10wt%Ni alloy. |
| Author;KUNIYOSHI KOKI(Univ. Tokyo, Graduate School of Engineering, JPN) SUZUKI TOSHIO(Univ. Tokyo, Graduate School of Engineering, JPN) IKEDA MINORU(Univ. Tokyo, Graduate School of Engineering, JPN) |
Journal Title;Current Advances in Materials and Processes
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Journal Code:X0994A
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ISSN:0914-6628
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VOL.18;NO.1;PAGE.P4(2005)
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| Figure&Table&Reference;FIG.2, REF.1 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;Two-dimensional film samples of the thickness less than about several tens .MU.m are prepared, and the shape and growth rate of Si crystal to grow super-cooled condition is recorded after the thin film sample is re-melted by a high-speed camera in detail. The growth morphology of the Si crystals are classified in terms of the crystal orientation, and the relation between the morphology and the degree of super-cooling and growth rate is clarified. The data can be applied to phased field analyses. |
